2SH14 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SH14

Silicon N-Channel IGBT

Hitachi -> Renesas Electronics 

2SH14

Table 2 Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max Unit Test conditions

———————————————————————————————————————————

Collector to emitter breakdown V(BR)CES 600

—

voltage

—

V IC = 100 µA, VGE = 0

———————————————————————————————————————————

Zero gate voltage collector

current

ICES

—

—

0.5

mA VCE = 600 V, VGE = 0

———————————————————————————————————————————

Gate to emitter leak current

IGES

—

—

±1

µA VGE = ±20 V, VCE = 0

———————————————————————————————————————————

Gate to emitter cutoff current

VGE(off)

3.0

—

5.0

V IC = 1 mA, VCE = 10 V

———————————————————————————————————————————

Collector to emitter saturation VCE(sat)1 —

voltage

2.0

—

V IC = 15 A, VGE = 15 V

———————————————————————————————————————————

Collector to emitter saturation VCE(sat)2 —

voltage

2.6

3.3** V IC = 30 A, VGE = 15 V

———————————————————————————————————————————

Input capacitance

Cies

—

2600 —

pF VCE = 10 V, VGE = 0,

f = 1 MHz

———————————————————————————————————————————

Switching time

tr

—

160

—

ns IC = 30 A,

————————————————

ton

—

300

—

————————————————

RL = 10 Ω,

tf

—

300

600

————————————————

VGE = ±15 V

toff

—

600

1200

Rg = 50 Ω

———————————————————————————————————————————

**VCE(sat)2 is specified at the correlated test condition (IC=20A)

2

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