2MBI50N-120 データシートの表示（PDF） - Fuji Electric

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2MBI50N-120

IGBT MODULE ( N series )

Fuji Electric 

IGBT MODULE ( N series )

n Outline Drawing

n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (4~5 Times Rated Current)

n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n Maximum Ratings and Characteristics

n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items

Symbols

Ratings Units

Collector-Emitter Voltage

Gate -Emitter Voltage

VCES

VGES

1200

V

± 20

V

Collector

Current

Max. Power Dissipation

Operating Temperature

Storage Temperature

Continuous

1ms

Continuous

1ms

IC

IC PULSE

-IC

-IC PULSE

PC

Tj

Tstg

50

100

A

50

100

400

W

+150

°C

-40 ∼ +125 °C

Isolation Voltage

Screw Torque

A.C. 1min.

Vis

2500

V

Mounting *1

3.5

Terminals *2

3.5

Nm

Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics

Items

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on Time

Turn-off Time

Diode Forward On-Voltage

Reverse Recovery Time

( at Tj=25°C )

Symbols

ICES

IGES

VGE(th)

VCE(sat)

Cies

Coes

Cres

tON

tr

tOFF

tf

VF

trr

Test Conditions

VGE=0V VCE=1200V

VCE=0V VGE=± 20V

VGE=20V IC=50mA

VGE=15V IC=50A

VGE=0V

VCE=10V

f=1MHz

VCC=600V

IC=50A

VGE=± 15V

RG=24Ω

IF=50A VGE=0V

IF=50A

• Thermal Characteristics

Items

Thermal Resistance

Symbols

Rth(j-c)

Rth(j-c)

Rth(c-f)

Test Conditions

IGBT

Diode

With Thermal Compound

Min.

4.5

Typ.

8000

2900

2580

0.65

0.25

0.85

0.35

Max.

1.0

15

7.5

3.3

Units

mA

µA

V

V

pF

1.2

0.6

1.5

µs

0.5

3.0

V

350

ns

Min.

Typ.

0.05

Max.

0.31

0.85

Units

°C/W

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