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TIP31C データシートの表示(PDF) - Inchange Semiconductor

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TIP31C
Iscsemi
Inchange Semiconductor Iscsemi
TIP31C Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP31
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP31A
TIP31B
IC=30mA; IB=0
TIP31C
VCEsat Collector-emitter saturation voltage IC=3A IB=0.375A
VBE
Base-emitter on voltage
IC=3A ; VCE=4V
TIP31
VCE=40V; VEB=0
ICES
Collector
cut-off current
TIP31A
TIP31B
VCE=60V; VEB=0
VCE=80V; VEB=0
TIP31C
VCE=100V; VEB=0
ICEO
Collector
cut-off current
TIP31/31A VCE=30V; IB=0
TIP31B/31C VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transiton frequency
IC=0.5A ; VCE=10V
Product Specification
TIP31/31A/31B/31C
MIN TYP. MAX UNIT
40
60
V
80
100
1.2
V
1.8
V
0.2
mA
0.3
mA
1.0
mA
25
10
50
3
MHz
2

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