2N4234 データシートの表示（PDF） - Microsemi Corporation
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2N4234 Datasheet PDF : 2 Pages
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TECHNICAL DATA
NPN POWER AMPLIFIER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/580
Devices
2N4234
2N4235
2N4236
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation @TA = 250C(1)
PT
@TC = 250C(2)
Operating & Storage Junction Temperature TJ, Tstg
1) Derate linearly 5.7 mW/0C for TA > +250C
2) Derate linearly 34 mW/0C for TC > +250C
2N4234 2N4235 2N4236
40
60
80
40
60
80
7.0
1.0
0.5
1.0
6.0
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N4234
2N4235
V(BR)CEO
2N4236
Collector-Emitter Cutoff Current
VCE = 30 Vdc
VCE = 40 Vdc
2N4234
ICEO
2N4235
VCE = 60 Vdc
Collector-Emitter Cutoff Current
2N4236
VCE = 40 Vdc, VBE = 1.5 Vdc
VCE = 60 Vdc, VBE = 1.5 Vdc
2N4234
2N4235
ICEX
VCE = 80 Vdc, VBE = 1.5 Vdc
Collector-Base Cutoff Current
2N4236
VCE = 40 Vdc
VCE = 60 Vdc
2N4234
2N4235
ICBO
VCE = 80 Vdc
2N4236
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
40
60
80
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
1.0
mAdc
1.0
1.0
100
100
ηAdc
100
100
100
ηAdc
100
0.5
mAdc
120101
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