HBAW56 データシートの表示（PDF） - Hi-Sincerity Microelectronics

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HBAW56

HIGH-CONDUCTANCE ULTRA DIODE

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HN200216

Issued Date : 1998.07.27

Revised Date : 2002.10.24

Page No. : 1/3

HBAW56

HIGH-CONDUCTANCE ULTRA DIODE

Description

The HBAW56 consists of two high-speed switching diodes with

common anodes, fabricated in planar technology, and encapsulated

in the small plastic SMD SOT23 package.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

SOT-23

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -65 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 85 V

Repetitive Reverse Voltage ................................................................................................. 75 V

Forward Current ............................................................................................................. 215 mA

Repetitive Forward Current ........................................................................................... 125 mA

Forward Surge Current (1ms)......................................................................................... 450 mA

Characteristics (Ta=25°C)

Characteristic

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

Symbol

VF(1)

VF(2)

VF(3)

VF(4)

IR

CT

Trr

Condition

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=0, f=1MHz

IF=IR=10mA, RL=100Ω

measured at IR=1mA

Min Max Unit

- 715 mV

- 855 mV

- 1000 mV

- 1250 mV

-

1 uA

-

2 pF

-

4 nS

HBAW56

HSMC Product Specification

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