2N6796 データシートの表示（PDF） - Semelab - > TT Electronics plc
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2N6796 Datasheet PDF : 2 Pages
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2N6796
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,Forward
Gate–Body Leakage Current,Reverse
ON CHARACTERISTICS
VGS = 0
ID = 0.25mA
VDS=Rated VDSS VGS = 0
VDS = 80V VGS = 0
TJ = 125°C
VDS = 0
VGS = 20V
VDS = 0
VGS = –20V
VGS(th)
rDS(on)
VDS(on)
gfs
Gate Thresshold Voltage
Static Drain–Source On–Resistance
Drain–Source On–Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS
VGS = 10V
VGS = 10V
VGS = 15V
ID = 0.5mA
ID = 5.0A
TA = 125°C
ID = 8.0A
ID = 5.0A
Ciss
Coss
Crss
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
VDS = 25V VGS = 0
f = 1.0MHZ
SWITCHING CHARACTERISTICS
ton
Turn–On Time
toff
Turn–Off Time
VDD = 30V ID = 5.0A
tr
RiseTime
Rgen = 50 ohms
tf
FallTime
SOURCE DRAIN DIODE CHARACTERISTICS*
VSD
Diode Forward Voltage
ton
Forward turn-On Time
trr
Reverse Recovery Time
IS = Rated ID(on)
VGS = 0
Min.
100
2.0
3.0
350
150
50
0.75
Typ. Max. Unit
V
250
1000 µA
100
nA
–100
4.0
V
0.18
Ω
0.35
1.56 V
9.0. mhos
900
500 pF
150
30
75
ns
40
45
1.5
V
Negligible
ns
300
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
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