D8P06E データシートの表示（PDF） - Fairchild Semiconductor
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D8P06E Datasheet PDF : 8 Pages
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RFD8P06E, RFD8P06ESM, RFP8P06E
Absolute Maximum Ratings TC = 25oC
RFD8P06E, RFD8P06ESM, RFP8P06E
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-60
-60
±20
8
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD
2
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
kV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV DSS
VGS(TH)
IDSS
IGSS
r DS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
C RSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 8A, VGS = -10V
VDD = -30V, ID ≈ 8A,
RL = 3.75Ω, VGS = -10V, RG = 2.5Ω
(Figure 13)
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -48V, ID = 8A,
RL = 6Ω
Ig(REF) = -1.45mA
VDS = -25V, VGS = 0V,
f = 1MHz
Figure 12
TO-220
TO-251, TO-252
MIN TYP MAX UNITS
-60
-
-
V
-2.0
-
-4.0
V
-
-
-1.0
µA
-
-
-25
µA
-
-
±10
µA
-
-
0.300
Ω
-
-
70
ns
-
15
-
ns
-
30
-
ns
-
40
-
ns
-
25
-
ns
-
-
100
ns
-
30
36
nC
-
15
18
nC
-
1.15 1.5
nC
-
600
-
pF
-
160
-
pF
-
35
-
pF
-
-
3.125 oC/W
-
-
62
oC/W
-
-
100 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
V SD
ISD = -8A
t rr
ISD = -8A, dISD/dt = -100A/µs
-
-
-1.5
-
-
125
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
©2002 Fairchild Semiconductor Corporation
RFD8P06E, RFD8P06ESM, RFP8P06E Rev. B
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