D8P06E データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
D8P06E Datasheet PDF : 8 Pages
| |||
RFD8P06E, RFD8P06ESM, RFP8P06E
Typical Performance Curves Unless Otherwise Specified (Continued)
-30
STARTING TJ = 25oC
-10
STARTING TJ = 150oC
If R = 0
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-20
VDD = -15V
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-15
-10
-5
-55oC
25oC
175oC
0
0
-2
-4
-6
-8
-10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
-20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
-15
VGS = -20V
-10
VGS = -10V
VGS = -8V
VGS = -7V
VGS = -6V
-5
VGS = -4.5V
VGS = -5V
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VGS = -10V, ID = 8A
1.5
1.0
0.5
0
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
VGS = VDS, ID = 250µA
1.5
2.0
ID = 250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
©2002 Fairchild Semiconductor Corporation
0
-80 -40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
RFD8P06E, RFD8P06ESM, RFP8P06E Rev. B
Share Link: 