2SB688 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SB688 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB688
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
-120
V
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
-2.5
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-5A ; VCE=-5V
VCB=-120V; IE=0
VEB=-5V; IC=0
-1.5
V
-10
μA
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
55
160
fT
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
Cob
Output capacitance
固I电NC半H导A体NGE SEMICONDUCTOR hFE Classifications
R
O
55-110
80-160
IE=0 ; VCB=-10V ;f=1MHz
280
pF
2
Share Link: 