2N6661 データシートの表示（PDF） - Vishay Siliconix
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2N6661 Datasheet PDF : 4 Pages
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2N6661/VN88AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0
VGS = 10 V
6V
0.8
5V
Output Characteristics for Low Gate Drive
100
VGS = 3 V
2.8 V
80
2.6 V
0.6
4V
60
2.4 V
0.4
0.2
0
0
0.5
0.4
0.3
3V
2V
1.0
2.0
3.0
4.0
5.0
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
125_C
25_C
0.2
0.1
VDS = 15 V
0
0
10
2
4
6
8
10
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
8
6
VGS = 10 V
4
2
0
0
0.5
1.0
1.5
2.0
2.5
ID – Drain Current (A)
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
40
2.2 V
20
0
0
2.0 V
1.8 V
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
7
6
5
4
0.5 A
3
I D = 0.1 A
2
1.0 A
1
0
0
2.25
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.00
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
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11-3
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