SI9933ADY データシートの表示（PDF） - Vishay Siliconix
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SI9933ADY Datasheet PDF : 4 Pages
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Si9933ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = –16 V, VGS = 0 V
VDS = –10 V, VGS = 0 V, TJ = 85_C
VDS v –5 V, VGS = –4.5 V
VDS v –5 V, VGS = –2.7 V
VGS = –4.5 V, ID = –3.2 A
VGS = –3.0 V, ID = –2.0 A
VGS = –2.7 V, ID = –1 A
VDS = –9 V, ID = –3.4 A
IS = –2.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = –6 V, VGS = –4.5 V, ID = –3.2 A
VDD = –6 V, RL = 6 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –2.0 A, di/dt = 100 A/ms
Min Typa Max Unit
–0.8
V
"100
nA
–1
mA
–3
–16
A
–3
0.06
0.075
0.078
0.105
W
0.085
0.115
8
S
–0.7
–1.2
V
10
20
2.1
nC
3.3
16
40
46
80
40
70
ns
25
40
60
100
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 70651
S-00652—Rev. B, 27-Mar-00
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