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HI350 データシートの表示(PDF) - Hi-Sincerity Microelectronics

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HI350
Hi-Sincerity
Hi-Sincerity Microelectronics Hi-Sincerity
HI350 Datasheet PDF : 3 Pages
1 2 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9008
Issued Date : 1996.04.12
Revised Date : 2002.07.16
Page No. : 1/3
HI350
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI350 is designed for line operated audio output amplifier, switch
mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -300 V
BVCEO Collector to Emitter Voltage................................................................................. -300 V
BVEBO Emitter to Base Voltage........................................................................................... -3 V
IC Collector Current....................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-300
-
BVCEO
-300
-
BVEBO
-3
-
ICBO
-
-
IEBO
-
-
*hFE
30
-
Max.
-
-
-
-100
-100
240
Unit
Test Conditions
V
IC=-100uA, IE=0
V
IC=-1mA, IB=0
V
IE=-0.1mA, IC=0
uA VCB=-300V
uA VEB=-3V, IC=0
VCE=-10V, IC=-50mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HI350
HSMC Product Specification

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