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MBM29DL323TE80TR データシートの表示(PDF) - Spansion Inc.

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MBM29DL323TE80TR
Spansion
Spansion Inc. Spansion
MBM29DL323TE80TR Datasheet PDF : 84 Pages
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MBM29DL32XTE/BE80/90
s FEATURES
• 0.23 µm Process Technology
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in
s FEATURES”)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
Single 3.0 V read, program, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (1) (Package suffix : TN Normal Bend Type, TR Reversed Bend Type)
63-ball FBGA (Package suffix : PBT)
• Minimum 100,000 program/erase cycles
High performance
80 ns maximum access time
Sector erase architecture
Eight 4 Kword and sixty-three 32 Kword sectors in word mode
Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
HiddenROM region
64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status
At VACC, increases program performance
Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low VCC write inhibit 2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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