VS-MURB2020CT-1PBF データシートの表示（PDF） - Vishay Semiconductors
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VS-MURB2020CT-1PBF Datasheet PDF : 10 Pages
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VS-MURB2020CTPbF, VS-MURB2020CT-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
-
Reverse recovery time
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
-
19
trr
TJ = 25 °C
-
21
TJ = 125 °C
-
35
Peak recovery current
IRRM
TJ = 25 °C
IF = 10 A
-
dIF/dt = 200 A/μs
1.9
TJ = 125 °C
VR = 160 V
-
4.8
Reverse recovery charge
TJ = 25 °C
Qrr
TJ = 125 °C
-
25
-
78
MAX.
35
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-263AB (D2PAK)
Case style TO-262AA
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
-
2.5
-
50
0.5
-
2.0
-
0.07
-
-
12
(10)
MURB2020CT
MURB2020CT-1
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94083
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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