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VS-MURB2020CTTRRPBF データシートの表示(PDF) - Vishay Semiconductors

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VS-MURB2020CTTRRPBF
Vishay
Vishay Semiconductors Vishay
VS-MURB2020CTTRRPBF Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
VS-MURB2020CTPbF, VS-MURB2020CT-1PbF
www.vishay.com
Vishay Semiconductors
180
50
VR = 160 V
TJ = 125 °C
170
40
TJ = 25 °C
160
DC
150 Square wave (D = 0.50)
Rated VR applied
140
See note (1)
130
0
3
6
9
12
15
94083_05
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
15
12
9
6
3
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
3
6
9
12
15
94083_06
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
30
20
10
0
100
IF = 20 A
IF = 10 A
IF = 5 A
1000
94083_07
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
250
VR = 160 V
TJ = 125 °C
200 TJ = 25 °C
IF = 20 A
IF = 10 A
150 IF = 5 A
100
50
0
100
1000
94083_08
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Revision: 10-Jul-15
4
Document Number: 94083
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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