SGP10N60RUFDTU データシートの表示（PDF） - Fairchild Semiconductor
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SGP10N60RUFDTU Datasheet PDF : 8 Pages
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Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 uA
VGE = 0 V, IC = 1 mA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 10 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 16 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 300 V, IC = 10 A,
RG = 20 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 300 V, IC = 10 A,
RG = 20 , VGE = 15 V,
Inductive Load, TC = 125C
VCC = 300 V, VGE = 15 V
@ TC = 100C
VCE = 300 V, IC = 10 A,
VGE = 15 V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/C
--
--
250
uA
--
-- ± 100 nA
5.0 6.0 8.5
V
--
2.2 2.8
V
--
2.5
--
V
--
660
--
pF
--
115
--
pF
--
25
--
pF
--
15
--
ns
--
30
--
ns
--
36
50
ns
--
158 200
ns
--
141
--
uJ
--
215
--
uJ
--
356 500
uJ
--
16
--
ns
--
33
--
ns
--
42
60
ns
--
242 350
ns
--
161
--
uJ
--
452
--
uJ
--
613 860
uJ
10
--
--
us
--
30
45
nC
--
5
10
nC
--
8
16
nC
--
7.5
--
nH
Electrical Characteristics of DIODE TC = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VFM
Diode Forward Voltage
IF = 12 A
TC = 25C
--
1.4 1.7
V
TC = 100C --
1.3
--
trr
Diode Reverse Recovery Time
TC = 25C
--
TC = 100C --
42
60
60
--
ns
Irr
Diode Peak Reverse Recovery
Current
IF = 12 A,
diF/dt = 200 A/s
TC = 25C
--
TC = 100C --
3.5 6.0
5.6
--
A
Qrr
Diode Reverse Recovery Charge
TC = 25C
--
TC = 100C --
80 180
nC
220
--
©1999 Fairchild Semiconductor Corporation
2
SGP10N60RUFD Rev. C2
www.fairchildsemi.com
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