NTE65101 データシートの表示（PDF） - NTE Electronics

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NTE65101

Integrated Circuit 256 x 4–Bit Static Random Access Memory (SRAM)

NTE Electronics 

DC Electrical Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Current

Iin Note 3

– 5.0 – nA

Input High Voltage

VIH

2.2 – VCC V

Input Low Voltage

VIL

–0.3 – 0.65 V

Output High Voltage

VOH IOH = –1mA

2.4 – – V

Output Low Voltage

Output Leakage Current

Operating Current

VOL IOL = 2mA

–

ILO CE1 = 2.2V, VOL = 0V to VCC, Note 3 –

ICC1 Vin = VCC, except CE1 ≤ 0.65V,

–

Outputs open

– 0.4 V

– ±1.0 µA

9.0 22 mA

ICC2 Vin = 2.2V, except CE1 ≤ 0.65V,

Outputs open

– 13 27 mA

Standby Current

ICCL CE2 ≤ 0.2V, Note 3, Note 4

– – 10 µA

Note 2. Typical values are TA = +25°C and nominal voltage.

Note 3. Current through all inputs and outputs included in ICCL measurement.

Note 4. Low current state is for CE2 = 0 only.

Capacitance:

Parameter

Input Capacitance

Output Capacitance

Symbol

Test Conditions

Cin

Cout

Vin = 0V

Vout = 0V

Min Typ Max Unit

– 4.0 8.0 pF

– 8.0 12.0 pF

Note 2. Typical values are TA = +25°C and nominal voltage.

Low VCC Retention Characteristics: (TA = 0° to +70°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

VDR

ICCDR1

tCDR

tR

CE2 ≤ 0.2V, VDR = 2V

Note 5

2.0 – – V

– 0.14 10 µA

0 – – ns

tRC –

– ns

Note 2. Typical values are TA = +25°C and nominal voltage.

Note 5. tRC = Read Cycle Time.

AC Operating Conditions and Characteristics: (Full operating voltage and temperature unless

otherwise specified)

AC Test Conditions:

Condition

Value

Input Pulse Levels

+0.65V to 2.2V

Input Rise and Fall Times

20ns

Output Load –

Timing Measurement Reference Level

1 TTL Gate and CL = 100pF

1.5V

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