2N2906A データシートの表示（PDF） - Semelab - > TT Electronics plc
部品番号
コンポーネント説明
メーカー
2N2906A Datasheet PDF : 3 Pages
| |||
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
V(BR)CBO
V(BR)EBO
ICEX
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = -10mA
IC = -10µA
IE = -10µA
VCE = -30V
IB = 0
IE = 0
IC = 0
VBE = -0.5V
ICBO
Collector Cut-Off Current
VCB = -50V
IE = 0
TA = 150°C
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
IC = -0.1mA
VCE = -10V
hFE(1)
Forward-current transfer
ratio
IC = -1.0mA
IC = -10mA
IC = -150mA
VCE = -10V
VCE = -10V
VCE = -10V
IC = -500mA VCE = -10V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
IC = -50mA
VCE = -20V
f = 100MHz
VCB = -10V
IE = 0
f = 1.0MHz
VEB = -2V
IC = 0
f = 1.0MHz
IC = -150mA VCC = -30V
IB1 = -15mA
IC = -150mA VCC = -30V
IB1 = - IB2 = -15mA
Min. Typ Max. Units
-60
-60
V
-5
-50
nA
-10
-10
µA
-0.4
-1.6
V
-1.3
-2.6
40
40
40
40
120
40
170
MHz
8
pF
30
45
ns
300
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 6299
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3
Share Link: 