2SA733_08 データシートの表示（PDF） - Unisonic Technologies

部品番号

コンポーネント説明

メーカー

2SA733_08

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SA733

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Dissipation

SOT-23/SOT-323

TO-92

PC

250

mW

1

W

Collector Current

Junction Temperature

Storage Temperature

IC

-150

mA

TJ

125

℃

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

„ CLASSIFICATION OF hFE

SYMBOL

TEST CONDITIONS

BVCBO IC=-100µA, IE=0

BVCEO IC=-10mA, IB=0

VCE(SAT) IC=-100mA, IB=-10mA

ICBO VCB=-40V, IE=0

IEBO VEB=-3V, IC=0

hFE VCE=-6V, IC=-1mA

fT

VCE=-10V, IC=-50mA

Cob VCB=-10V, IE=0, f=1MHz

NF

IC=-0.1mA, VCE=-6V

RG=10kΩ, f=100Hz

RANK

RANGE

R

90-180

Q

135-270

P

200-400

MIN TYP MAX UNIT

-60

V

-50

V

-0.1 -0.3 V

-100 nA

-100 nA

90

600

100 190

MHz

2.0 3.0 pF

4.0 6.0 dB

K

300-600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R206-068,C

Share Link: