NTE383 データシートの表示（PDF） - NTE Electronics
部品番号
コンポーネント説明
メーカー
NTE383 Datasheet PDF : 2 Pages
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NTE382 (NPN) & NTE383 (PNP)
Silicon Complementary Transistors
Audio Frequency Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = 10µA, IE = 0
IC = 1mA, RBE = ∞
IE = 10µA, IC = 0
VCB = 100V, IE = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
hFE
VCE(sat)
VBE
VCE = 5V, IC = 150mA
VCE = 5V, IC = 500mA
IC = 500mA, IB = 50mA
VCE = 5V, IC = 150mA
Current Gain–Bandwidth Product
fT
VCE = 5V, IC = 150mA
Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
120 – – V
100 – – V
5––V
– – 10 µA
160 – 320
30 – –
– – 1.0 V
– – 1.5 V
– 140 – MHz
– 20 – pF
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