PMXB350UPE データシートの表示（PDF） - NXP Semiconductors.
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PMXB350UPE Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -1.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -1 A; Tj = 25 °C
VGS = -1.8 V; ID = -0.4 A; Tj = 25 °C
VGS = -1.5 V; ID = -10 mA; Tj = 25 °C
VGS = -1.2 V; ID = -1 mA; Tj = 25 °C
gfs
forward
VDS = -5 V; ID = -1.2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -10 V; ID = -1.2 A; VGS = -4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -10 V; ID = -1.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = -0.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 -
-
V
-0.45 -0.7 -0.95 V
-
-
-1
µA
-
-
-10 µA
-
-
10
µA
-
350 447 mΩ
-
508 650 mΩ
-
450 645 mΩ
-
600 940 mΩ
-
760 2000 mΩ
-
1200 -
mΩ
-
5.2 -
S
-
0.8 -
Ω
-
1.25 2.3 nC
-
0.27 -
nC
-
0.28 -
nC
-
116 -
pF
-
16.5 -
pF
-
12.2 -
pF
-
3
-
ns
-
9
-
ns
-
18
-
ns
-
6
-
ns
-
-0.8 -1.2 V
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 January 2014
© NXP N.V. 2014. All rights reserved
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