PMXB350UPE データシートの表示（PDF） - NXP Semiconductors.
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PMXB350UPE Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
-5
ID
(A)
-4
VGS = -5 V
aaa-009269
-4.5 V
-10-2
ID
(A)
-10-3
aaa-009270
-3
min
typ
max
-2.5 V
-10-4
-2
-1
0
0
-1
Tj = 25 °C
-2 V
-1.8 V
-1.4 V
-1.2 V
-2
-3
-4
VDS (V)
-10-5
-10-6
0
-0.5
Tj = 25 °C; VDS = -5 V
-1.0
-1.5
VGS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
1.6
RDSon
(Ω)
1.2
-1.2 V
-1.5 V
-1.8 V
aaa-009272
1.6
RDSon
(Ω)
1.2
aaa-009273
0.8
-2.5 V
-3.3V
0.8
Tj = 150 °C
0.4
VGS = -4.5 V
0.4
Tj = 25 °C
0
0
-1
-2
-3
-4
-5
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-1
-2
-3
-4
-5
ID (A)
ID = -1.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 January 2014
© NXP N.V. 2014. All rights reserved
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