PMXB350UPE データシートの表示（PDF） - NXP Semiconductors.
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PMXB350UPE Datasheet PDF : 16 Pages
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NXP Semiconductors
-4.5
VGS
(V)
-3.0
aaa-009278
-1.5
0
0
0.5
1.0
1.5
2.0
QG (nC)
ID = -1.2 A; VDS = -10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
-2.0
IS
(A)
-1.5
PMXB350UPE
20 V, P-channel Trench MOSFET
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-009279
-1.0
-0.5
Tj = 150 °C
Tj = 25 °C
VGS = 0 V
0
0
-0.4
-0.8
-1.2
VSD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
PMXB350UPE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
24 January 2014
© NXP N.V. 2014. All rights reserved
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