VS-MBR20100CT-1PBF データシートの表示（PDF） - Vishay Semiconductors
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VS-MBR20100CT-1PBF Datasheet PDF : 8 Pages
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VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-MBRB20...CTPbF
2
1 Common 3
Anode cathode Anode
VS-MBR20 ...CT-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
2 x 10 A
80 V, 90 V, 100 V
0.70 V
15 mA at 125 °C
150 °C
Common cathode
EAS
8.0 mJ
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap D2PAK and TO-262 packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFRM
VRRM
IFSM
VF
TJ
Rectangular waveform (per device)
TC = 133 °C (per leg)
tp = 5 μs sine
10 Apk, TJ = 125 °C
Range
VALUES
20
20
80 to 100
850
0.70
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-MBRB2080CTPbF
VS-MBR2080CT-1PbF
VS-MBRB2090CTPbF
VS-MBR2090CT-1PbF
VS-MBRB20100CTPbF
VS-MBR20100CT-1PbF
Maximum DC reverse voltage
VR
80
90
100
Maximum working peak reverse voltage VRWM
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Peak repetitive forward current per leg
IFRM
Non-repetitive peak surge current
IFSM
Peak repetitive reverse surge current
IRRM
Non-repetitive avalanche energy per leg EAS
TEST CONDITIONS
TC = 133 °C, rated VR
Rated VR, square wave, 20 kHz, TC = 133 °C
5 μs sine or
Following any rated load condition
3 μs rect. pulse and with rated VRRM applied
Surge applied at rated load conditions half wave,
single phase, 60 Hz
2.0 μs, 1.0 kHz
TJ = 25 °C, IAS = 2 A, L = 12 mH
VALUES
10
20
20
850
150
0.5
24
UNITS
A
mJ
Revision: 18-Oct-16
1
Document Number: 94306
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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