BC847BPDW1T2G(2010) データシートの表示（PDF） - ON Semiconductor

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BC847BPDW1T2G
(Rev.:2010)

Dual General Purpose Transistors NPN/PNP Duals (Complementary)

ON Semiconductor 

BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G

TYPICAL NPN CHARACTERISTICS − BC847 SERIES

500

150°C

400

300 25°C

200 −55°C

100

VCE = 1 V

0.30

0.25

IC/IB = 20

0.20

0.15

0.10

0.05

150°C

25°C

−55°C

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 17. DC Current Gain vs. Collector

Current

1.1

1.0 IC/IB = 20

0.9

−55°C

25°C

0.8

150°C

0.7

0.6

0.5

0.4

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 19. Base Emitter Saturation Voltage vs.

Collector Current

0

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 18. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1

VCE = 5 V

1.0

0.9

−55°C

0.8

25°C

0.7

0.6

150°C

0.5

0.4

0.3

0.2

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

Figure 20. Base Emitter Voltage vs. Collector

Current

2.0

TA = 25°C

1.6

IC = 200 mA

1.2

IC = IC = IC = 50 mA

IC = 100 mA

10 mA 20 mA

0.8

0.4

0

0.02

0.1

1.0

IB, BASE CURRENT (mA)

10 20

Figure 21. Collector Saturation Region

1.0

-55°C to +125°C

1.2

1.6

2.0

2.4

2.8

0.2

1.0

10

100

IC, COLLECTOR CURRENT (mA)

Figure 22. Base−Emitter Temperature

Coefficient

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