IRF7307QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20
P-Ch -20
V
N-Ch
P-Ch
0.044
-0.012
V/°C
N-Ch
P-Ch
0.050
0.070
0.090
Ω
0.140
N-Ch 0.70
P-Ch -0.70
V
N-Ch 8.30
P-Ch 4.00
S
N-Ch 1.0
P-Ch
N-Ch
-1.0
25
µA
P-Ch -25
N-P ±100
N-Ch 20
P-Ch 22
N-Ch
P-Ch
2.2
3.3
nC
N-Ch 8.0
P-Ch 9.0
N-Ch 9.0
P-Ch 8.4
N-Ch 42
P-Ch
N-Ch
26
32
ns
P-Ch 51
N-Ch 51
P-Ch 33
N-P
N-P
4.0
6.0
nH
N-Ch 660
P-Ch 610
N-Ch 280
P-Ch 310
pF
N-Ch 140
P-Ch 170
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A
VGS = 2.7V, ID = 2.2A
VGS = -4.5V, ID = -2.2A
VGS = -2.7V, ID = -1.8A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.6A
VDS = -15V, ID = -2.2A
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 2.5
IS
Continuous Source Current (Body Diode)
P-Ch -2.5 A
N-Ch 21
ISM
Pulsed Source Current (Body Diode)
P-Ch -17
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
1.0 V
-1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch 29 44 ns N-Channel
P-Ch 56 84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch
P-Ch
22
71
33
110
nC
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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September 3, 2014