MAX6873 データシートの表示（PDF） - Maxim Integrated
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MAX6873 Datasheet PDF : 48 Pages
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EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
Pin Description (continued)
PIN
MAX6872 MAX6873
17
17
18
18
19
19
20
20
21
21
22
22
25
—
26
—
27
27
28
28
29
29
30
30
31
31
32
2
—
—
NAME
GPI4
GPI3
GPI2
GPI1
ABP
DBP
IN6
IN5
IN4
IN3
IN2
IN1
I.C.
PO1
EP
FUNCTION
General-Purpose Logic Input 4. An internal 10µA current source pulls GPI4 to GND.
Configure GPI4 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 3. An internal 10µA current source pulls GPI3 to GND.
Configure GPI3 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 2. An internal 10µA current source pulls GPI2 to GND.
Configure GPI2 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 1. An internal 10µA current source pulls GPI1 to GND.
Configure GPI1 to control watchdog timer functions or the programmable outputs.
Internal Power-Supply Output. Bypass ABP to GND with a 1µF ceramic capacitor. ABP
powers the internal circuitry of the MAX6872/MAX6873. ABP supplies the input voltage to
the internal charge pumps when the programmable outputs are configured as charge-
pump outputs. Do not use ABP to supply power to external circuitry.
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1µF ceramic capacitor.
DBP supplies power to the EEPROM memory and the internal logic circuitry. Do not use
DBP to supply power to external circuitry.
Voltage Input 6. Configure IN6 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN6 to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 5. Configure IN5 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN5 to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 4. Configure IN4 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN4 to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 3. Configure IN3 to detect voltage thresholds between 1V and 5.5V in 20mV
increments, or 0.5V to 3.05V in 10mV increments. For improved noise immunity, bypass
IN3 to GND with a 0.1µF capacitor installed as close to the device as possible.
Bipolar Voltage Input 2. Configure IN2 to detect negative voltage thresholds from -2.5V to
-15.25V in 50mV increments or -1.25V to -7.625V in 25mV increments. Alternatively,
configure IN2 to detect positive voltage thresholds from 2.5V to 15.25V in 50mV
increments or 1.25V to 7.625V in 25mV increments. For improved noise immunity, bypass
IN2 to GND with a 0.1µF capacitor installed as close to the device as possible.
High-Voltage Input 1. Configure IN1 to detect voltage thresholds from 2.5V to 13.2V in
50mV increments or 1.25V to 7.625V in 25mV increments. For improved noise immunity,
bypass IN1 to GND with a 0.1µF capacitor installed as close to the device as possible.
Internal Connection. Leave unconnected.
Programmable Output 1. Configurable active-high, active-low, open-drain, weak pullup, or
charge-pump output. PO1 pulls low with a weak 10µA internal current sink for 1V < VABP <
VUVLO. PO1 assumes its programmed conditional output state when ABP exceeds UVLO.
Exposed Paddle. Exposed paddle is internally connected to GND.
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