MAX6875 データシートの表示（PDF） - Maxim Integrated
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MAX6875 Datasheet PDF : 40 Pages
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EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
Pin Description (continued)
PIN
MAX6874 MAX6875
17
—
18
18
19
19
20
20
21
21
22
22
25
—
26
—
27
27
28
28
29
29
30
30
31
31
32
2
—
—
NAME
GPI4
GPI3
GPI2
GPI1
ABP
DBP
IN6
IN5
IN4
IN3
IN2
IN1
I.C.
PO1
EP
FUNCTION
General-Purpose Logic Input 4 (MAX6874 Only). An internal 10µA current source pulls GPI4 to
GND. Configure GPI4 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 3. An internal 10µA current source pulls GPI3 to GND. Configure
GPI3 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 2. An internal 10µA current source pulls GPI2 to GND. Configure
GPI2 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 1. An internal 10µA current source pulls GPI1 to GND. Configure
GPI1 to control watchdog timer functions or the programmable outputs.
Internal Power-Supply Output. Bypass ABP to GND with a 1µF ceramic capacitor. ABP powers
the internal circuitry of the MAX6874/MAX6875. Do not use ABP to supply power to external
circuitry.
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1µF ceramic capacitor. DBP
supplies power to the EEPROM memory and the internal logic circuitry. Do not use DBP to
supply power to external circuitry.
Voltage Input 6. Configure IN6 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN6
to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 5. Configure IN5 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN5
to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 4. Configure IN4 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN4
to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 3. Configure IN3 to detect voltage thresholds between +1V and +5.5V in 20mV
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN3
to GND with a 0.1µF capacitor installed as close to the device as possible.
Voltage Input 2. Configure IN2 to detect voltage thresholds from +2.5V to +5.5V in 50mV
increments or +1.25V to +3.05V in 25mV increments. For improved noise immunity, bypass IN2
to GND with a 0.1µF capacitor installed as close to the device as possible.
High-Voltage Input 1. Configure IN1 to detect voltage thresholds from +2.5V to +13.2V in 50mV
increments or +1.25V to +7.6V in 25mV increments. For improved noise immunity, bypass IN1
to GND with a 0.1µF capacitor installed as close to the device as possible.
Internal Connection. Leave unconnected.
Programmable Output 1. Configurable active-high or active-low open-drain output. PO1 pulls
low with a 10µA internal current sink for +1V < VABP < VUVLO. PO1 assumes its programmed
conditional output state when ABP exceeds UVLO.
Exposed Paddle. Exposed paddle is internally connected to GND.
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