SZSMF12CT1G データシートの表示（PDF） - ON Semiconductor
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SZSMF12CT1G Datasheet PDF : 6 Pages
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SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G
SMF05CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM (Note 2)
5.0
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
VBR
IT = 1 mA, (Note 3)
IR
VRWM = 5 V
VC
IPP = 5 A (8 x 20 ms Waveform)
VC
IPP = 8 A (8 x 20 ms Waveform)
IPP
8 x 20 ms Waveform
CJ
VR = 0 V, f = 1 MHz (Line to GND)
6.2
7.2
V
0.07
5.0
mA
9.8
V
12.5
V
8.0
A
80
130
pF
SMF12CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
VRWM
VBR
IR
VC
VC
IPP
CJ
(Note 2)
IT = 1 mA, (Note 3)
VRWM = 12 V
IPP = 3 A (8 x 20 ms Waveform)
IPP = 6 A (8 x 20 ms Waveform)
8 x 20 ms Waveform
VR = 0 V, f = 1 MHz (Line to GND)
13.3
0.01
40
12
V
15
V
0.1
mA
21
V
23
V
6.0
A
60
pF
SMF15CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
VRWM
VBR
IR
VC
VC
IPP
CJ
(Note 2)
IT = 1 mA, (Note 3)
VRWM = 15 V
IPP = 1 A (8 x 20 ms Waveform)
IPP = 5 A (8 x 20 ms Waveform)
8 x 20 ms Waveform
VR = 0 V, f = 1 MHz (Line to GND)
15
V
17
19
V
0.01
1.0
mA
23
V
29
V
5.0
A
33
45
pF
SMF24CT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM (Note 2)
24
V
Breakdown Voltage
VBR
IT = 1 mA, (Note 3)
26.7
32
V
Reverse Leakage Current
IR
VRWM = 24 V
0.01
1.0
mA
Clamping Voltage
VC
IPP = 1 A (8 x 20 ms Waveform)
40
V
Clamping Voltage
VC
IPP = 2.5 A (8 x 20 ms Waveform)
44
V
Maximum Peak Pulse Current
IPP
8 x 20 ms Waveform
2.5
A
Capacitance
CJ
VR = 0 V, f = 1 MHz (Line to GND)
21
25
pF
2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Include SZ-prefix devices where applicable.
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