P2680-03 データシートの表示（PDF） - Hamamatsu Photonics
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P2680-03 Datasheet PDF : 4 Pages
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PbSe photoconductive detector P791/P2038/P2680 series, P3207-05
I Spectral response
P791/P2038/P2680 series
(Typ.)
100
-20 ˚C
80
P3207-05
(Typ.)
100
80
60
-10 ˚C
40
25 ˚C
20
0
1
2
3
4
5
6
7
WAVELENGTH (µm)
KIRDB0280EA
I S/N vs. supply voltage
(Typ. Ta=25 ˚C)
600
18
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm2
500 CHOPPING FREQUENCY: 600 Hz
15
FREQUENCY BANDWIDTH: 60 Hz
Supply voltage is the
400
value which contains
load resistance
12
S
300
9
N
200
6
100
3
0
0
0 10 20 30 40 50 60 70 80 90 100
SUPPLY VOLTAGE (V)
KIRDB0052EC
I Photo sensitivity temperature characteristic
103
(Typ.)
LIGHT SOURCE: BLACK BODY 500 K
SUPPLY VOLTAGE: 15 V
INCIDENT ENERGY: 16.7 µW/cm2
CHOPPING FREQUENCY: 600 Hz
60
40
20
0
1
2
3
4
5
6
7
WAVELENGTH (µm)
KIRDB0281EA
I S/N vs. chopping frequency
103
(Typ. Ta=25 ˚C)
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 µW/cm2
SUPPLY VOLTAGE: 15 V
S/N
S
102
N
101
102
103
104
CHOPPING FREQUENCY (Hz)
KIRDB0053EB
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
I Dark resistance, rise time temperature characteristics
103
(Typ.)
DARK RESISTANCE
102
102 RISE TIME
101
-20 -10 0
10 20 30 40 50 60
ELEMENT TEMPERATURE (˚C)
KIRDB0054EB
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
2
101
-20 -10 0
10 20 30 40 50 60
ELEMENT TEMPERATURE (˚C)
KIRDB0055EB
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