K3324 データシートの表示（PDF） - NEC => Renesas Technology
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K3324 Datasheet PDF : 8 Pages
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PACKAGE DRAWING (Unit : mm)
TO-3P (MP-88)
15.7 MAX.
3.2±0.2
4
1 23
4.7 MAX.
1.5 TYP.
2SK3324
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
2.2±0.2
5.45 TYP.
1.0±0.2
0.6±0.1
2.8±0.1
5.45 TYP.
1: Gate
2: Drain
3: Source
4: Fin (Drain)
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14203EJ2V0DS00
7
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