VS-12TTS08PBF(2011) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
VS-12TTS08PBF Datasheet PDF : 7 Pages
| |||
www.vishay.com
VS-12TTS08PbF Series
Vishay Semiconductors
130 At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
120
Initial TJ = 125°C
@60 Hz 0.0083 s
110
@50 Hz 0.0100 s
100
90
80
70
12TTS08
60
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
12TTS08
100
150
Maximum Non Repetitive Surge Current
140
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
130
Initial TJ= 125°C
120
No Voltage Reapplied
Rated VRRM Reapplied
110
100
90
80
70
60 12TTS08
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
TJ= 25°C
10
TJ= 125°C
1
0.5 1 1.5 2 2.5 3 3.5
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
1 D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
0.0001
Steady State Value
(DC Operation)
Single Pulse
12TTS08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 24-Aug-11
4
Document Number: 94380
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 