TIP33C データシートの表示（PDF） - Bourns, Inc
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TIP33C Datasheet PDF : 4 Pages
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TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP33
40
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
TIP33A
60
TIP33B
80
TIP33C
100
VCE = 80 V
VBE = 0
TIP33
0.4
Collector-emitter
ICES cut-off current
VCE = 100 V
VCE = 120 V
VBE = 0
VBE = 0
TIP33A
TIP33B
0.4
0.4
VCE = 140 V
VBE = 0
TIP33C
0.4
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
TIP33/33A
TIP33B/33C
0.7
0.7
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
1
Forward current
hFE
transfer ratio
VCE = 4 V
VCE = 4 V
IC = 1 A
IC = 3 A
40
(see Notes 5 and 6)
20
100
Collector-emitter
VCE(sat) saturation voltage
IB = 0.3 A
IB = 2.5 A
IC = 3 A
IC = 10 A
(see Notes 5 and 6)
1
4
OBSOLETE Base-emitter
VBE
voltage
VCE = 4 V
VCE = 4 V
IC = 3 A
IC = 10 A
(see Notes 5 and 6)
1.6
3
Small signal forward
hfe
current transfer ratio VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|hfe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX
1.56
35.7
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = 6 A
VBE(off) = -4 V
IB(on) = 0.6 A
RL = 5 Ω
IB(off) = -0.6 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX
0.6
1
UNIT
V
mA
mA
mA
V
V
UNIT
°C/W
°C/W
UNIT
µs
µs
PRODUCT INFORMATION
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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