LM285B-2.5V データシートの表示（PDF） - TelCom Semiconductor, Inc

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LM285B-2.5V

LOW POWER, BANDGAP VOLTAGE REFERENCES

TelCom Semiconductor, Inc 

LM285/285B-1.2V

LM285/285B-2.5V

LM385/385B-1.2V

LM385/385B-2.5V

LOW POWER, BANDGAP

VOLTAGE REFERENCES

ABSOLUTE MAXIMUM RATINGS*

Forward Current .................................................... +10mA

Reverse Current .................................................... +30mA

Storage Temperature Range ................ – 65°C to +150°C

Operating Temperature Range

TO-92 Package ................................ – 40°C to +85°C

Surface Mount Package ................... – 40°C to +85°C

Lead Temperature (Soldering, 10 sec)

TO-92 Package .............................................. +300°C

Surface Mount Package ................................. +300°C

Power Dissipation

Limited by Forward/Reverse Current

*Functional operation above the absolute maximum stress ratings is not

implied.

ELECTRICAL CHARACTERISTICS: TA = +25°C, unless otherwise specified.

Symbol Parameter

LM285 / LM285B–1.2 LM385 / LM385B–1.2

Test Conditions Min Typ Max Min Typ Max Unit

V(BR)R

IRMIN

∆V(BR)R

Z

∆V(BR)/∆T

S

Reverse Breakdown Voltage

LM285B-1.2/LM385B-1.2

TA = Tlow to Thigh (Note 1)

LM285-1.2V/LM385-1.2V

TA = Tlow to Thigh (Note 1)

Minimum Operating Current

TA = +25°C

TA = Tlow to Thigh (Note 1)

Reverse Breakdown Voltage

Change with Current

IRmin = IR = 1.0mA, TA = +25°C

TA = Tlow to Thigh (Note 1)

1.0mA = IR = 20mA, TA = +25°C

TA = Tlow to Thigh (Note 1)

Reverse Dynamic Impedance

Average Temperature Coefficient

Long Term Stability

IR ≤ 20mA

IR = 100µA

10µA ≤ IR ≤ 20mA

IR = 100µA,

TA = +25°C ±0.1°C

Symbol Parameter

Test Conditions

1.223

1.200

1.205

1.192

1.235

—

1.235

—

1.247

1.270

1.260

1.273

—

8.0 15

—

—

20

—

— 1.0

—

— 1.5

—

—

10

—

—

20

—

0.6 —

—

30 100

—

20

—

LM285 / LM285B–2.5

Min Typ Max

V

1.223 1.235 1.247

1.210 — 1.260

1.205 1.235 1.260

1.192 — 1.273

µA

—

8.0 15

—

—

20

mV

—

— 1.0

—

— 1.5

—

—

20

—

—

25

—

0.6 —

Ω

—

30 100 ppm/°C

—

20

— ppm/kHR

LM385 / LM385B–2.5

Min Typ Max Unit

V(BR)R

Reverse Breakdown Voltage

LM285B-2.5/LM385B-2.5

IR = 20mA

2.462

TA = Tlow to Thigh (Note 1)

LM285-2.5V/LM385-2.5V

2.415

2.425

TA = Tlow to Thigh (Note 1)

2.400

IRMIN

Minimum Operating Current

TA = +25°C

—

TA = Tlow to Thigh (Note 1)

—

∆V(BR)R

Reverse Breakdown Voltage

Change with Current

IRmin = IR = 1.0mA, TA = +25°C

—

TA = Tlow to Thigh (Note 1)

—

1.0mA = IR = 20mA, TA = +25°C

—

TA = Tlow to Thigh (Note 1)

—

Z

Reverse Dynamic Impedance

IR = 100µA

—

∆V(BR)/∆T Average Temperature Coefficient 20µA ≤ IR ≤ 20mA

—

S

Long Term Stability

IR = 100µA,

—

TA = +25°C ±0.1°C

Note: 1. Tlow = – 40°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5

0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5

Thigh = +85°C for LM285-1.2, LM285-2.5, LM285B-1.2, LM285B-2.5

3-10

+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5

2.5 2.538 2.462

— 2.585 2.436

2.5 2.575 2.425

— 2.600 2.400

13 20

—

—

30

—

— 1.0

—

— 1.5

—

—

10

—

—

20

—

0.6 —

—

30 100

—

20

—

—

V

2.5 2.538

— 2.564

2.5 2.575

— 2.600

µA

13 20

—

30

mV

— 2.0

— 2.5

—

20

—

25

0.6 —

Ω

30 100 ppm/°C

20

— ppm/kHR

TELCOM SEMICONDUCTOR, INC.

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