NUF8010MU(2007) データシートの表示（PDF） - ON Semiconductor

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NUF8010MU
(Rev.:2007)

Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package

ON Semiconductor 

NUF8010MU

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

ESD Discharge IEC61000-4-2

VPP

Contact Discharge

kV

8.0

Operating Temperature Range

TOP

-40 to 85

°C

Storage Temperature Range

TSTG

-55 to 150

°C

Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Maximum Reverse Working Voltage

Breakdown Voltage

Leakage Current

Resistance

Capacitance (Notes 1 and 2)

VRWM

VBR

IR

RA

Cd

IR = 1.0 mA

VRWM = 3.3 V

IR = 20 mA

5.0

V

6.0

7.0

8.0

V

100

nA

85

100

115

W

7.0

11

pF

Cut-Off Frequency (Note 3)

f3dB

Above this frequency,

215

appreciable attenuation occurs

MHz

1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.

2. Total Line Capacitance is 2 times the Diode Capacitance (Cd).

3. 50 W source and 50 W load termination.

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