NUF8010MUT2G データシートの表示（PDF） - ON Semiconductor

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NUF8010MUT2G

8-Channel EMI Filter with Integrated ESD Protection

ON Semiconductor 

NUF8010MU

Table 1. FUNCTIONAL PIN DESCRIPTION

Filter

Device Pins

Filter 1

1 & 16

Filter 2

2 & 15

Filter 3

3 & 14

Filter 4

4 & 13

Filter 5

5 & 12

Filter 6

6 & 11

Filter 7

7 & 10

Filter 8

8&9

Ground Pad

GND

Filter + ESD Channel 1

Filter + ESD Channel 2

Filter + ESD Channel 3

Filter + ESD Channel 4

Filter + ESD Channel 5

Filter + ESD Channel 6

Filter + ESD Channel 6

Filter + ESD Channel 6

Ground

Description

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

ESD Discharge IEC61000−4−2

Contact Discharge

VPP

8.0

kV

Operating Temperature Range

TOP

−40 to 85

°C

Storage Temperature Range

TSTG

−55 to 150

°C

Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Maximum Reverse Working Voltage

VRWM

5.0

V

Breakdown Voltage

VBR

IR = 1.0 mA

6.0

7.0

8.0

V

Leakage Current

IR

VRWM = 3.3 V

100

nA

Resistance

RA

IR = 20 mA

85

100

115

W

Diode Capacitance

Cd

VR = 2.5 V, f = 1.0 MHz

7

11

pF

Line Capacitance

CL

VR = 2.5 V, f = 1.0 MHz

14

18

pF

3 dB Cut−Off Frequency (Note 1)

f3dB

Above this frequency,

215

appreciable attenuation occurs

MHz

6 dB Cut−Off Frequency

f6dB

Above this frequency,

280

appreciable attenuation occurs

MHz

1. 50 W source and 50 W load termination.

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