HN58X25128TI データシートの表示（PDF） - Renesas Electronics

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HN58X25128TI

Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory

Renesas Electronics 

HN58X25128I/HN58X25256I

DC Characteristics

Parameter

Input leakage current

Symbol Min

ILI

—

Max

2

Output leakage current

ILO

—

2

VCC current

Standby ISB

—

3

Active

ICC1

—

2.5

—

4

Output voltage

ICC2

VOL1

VOL2

VOH1

VOH2

—

2.5

—

4

—

0.4

—

0.4

VCC × 0.8 —

VCC × 0.8 —

Unit

µA

µA

µA

mA

mA

mA

mA

V

V

V

V

Test conditions

VCC = 5.5 V, VIN = 0 to 5.5 V

(S, D, C, HOLD, W)

VCC = 5.5 V, VOUT = 0 to 5.5 V

(Q)

VIN = VSS or VCC,

VCC = 5.5 V

VCC = 3.6 V, Read at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

Q = OPEN

VCC = 5.5 V, Read at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

Q = OPEN

VCC = 3.6 V, Write at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

VCC = 5.5 V, Write at 5 MHz

VIN = VCC × 0.1/VCC × 0.9

VCC = 5.5 V, IOL = 2 mA

VCC = 2.5 V, IOL = 1.5 mA

VCC = 5.5 V, IOL = −2 mA

VCC = 2.5 V, IOL = −0.4 mA

Rev.1.00, Jun.20.2003, page 6 of 27

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