AM29F100B-75EI データシートの表示（PDF） - Advanced Micro Devices

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AM29F100B-75EI

1 Megabit (131,072 x 8-Bit/65,536 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

Advanced Micro Devices 

it is not already programmed before executing the erase

operation. During erase, the device automatically times

the erase pulse widths and verifies proper cell margin.

This device also features a sector erase architecture.

This allows for sectors of memory to be erased and

reprogrammed without affecting the data contents of

other sectors. A sector is typically erased and verified

within 1.5 seconds. The Am29F100 is erased when

shipped from the factory.

The Am29F100 device also features hardware sector

protection. This feature will disable both program and

erase operations in any combination of eleven sectors

of memory.

AMD has implemented an Erase Suspend feature that

enables the user to put erase on hold for any period of

time to read data from a sector that was not being

erased. Thus, true background erase can be achieved.

The device features single 5.0 Volt power supply opera-

tion for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations. A low VCC detector auto-

matically inhibits write operations during power transi-

tions. The end of program or erase is detected by the

RY/BY pin. Data Polling of DQ7, or by the Toggle Bit

(DQ6). Once the end of a program or erase cycle has

been completed, the device automatically resets to the

read mode.

The Am29F100 also has a hardware RESET pin. When

this pin is driven low, execution of any Embedded Pro-

gram Algorithm or Embedded Erase Algorithm will be

terminated. The internal state machine will then be reset

into the read mode. The RESET pin may be tied to the

system reset circuitry. Therefore, if a system reset oc-

curs during the Embedded Program Algorithm or Em-

bedded Erase Algorithm, the device will be

automatically reset to the read mode and will have erro-

neous data stored in the address locations being oper-

ated on. These locations will need re-writing after the

Reset. Resetting the device will enable the system’s mi-

croprocessor to read the boot-up firmware from the

Flash memory.

AMD

AMD’s Flash technology combines years of Flash mem-

ory manufacturing experience to produce the highest

levels of quality, reliability and cost effectiveness. The

Am29F100 memory electrically erases all bits within a

sector simultaneously via Fowler-Nordhiem tunneling.

The bytes/words are programmed one byte/word at a

time using the EPROM programming mechanism of hot

electron injection.

Flexible Sector-Erase Architecture

One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and

one 64 Kbyte sectors

Individual-sector or multiple-sector erase capability

Sector protection is user definable

(x8)

(x16)

1FFFFh 0FFFFh

SA4

16 Kbyte

1BFFFFh 0DFFFh

SA3

8 Kbyte

19FFFh 0CFFFh

SA2

8 Kbyte

17FFFh 0BFFFh

SA1

32 Kbyte

0FFFFh 07FFFh

SA0

64 Kbyte

00000h 00000h

18926B-1

Am29F100T Sector Architecture

(x8)

(x16)

1FFFh 0FFFFh

SA4

64 Kbyte

0FFFFh 07FFFh

SA3

32 Kbyte

07FFFh 03FFFh

SA2

8 Kbyte

05FFFh 02FFFh

SA1

8 Kbyte

03FFFh 01FFFh

SA0

16 Kbyte

00000h 00000h

18926B-2

Am29F100B Sector Architecture

Am29F100T/Am29F100B

1-33

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