IXTH16N50D2(2017) データシートの表示（PDF） - IXYS CORPORATION
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IXTH16N50D2 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 30V, ID = 8A, Note 1
Ciss
Coss
Crss
VGS = -10V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = + 5V, VDS = 250V, ID = 8A
RG = 3.3 (External)
Qg(on)
Qgs
Qgd
VGS = + 5V, VDS = 250V, ID = 8A
RthJC
RthCS
TO-247
Characteristic Values
Min. Typ. Max.
7
12
S
5250
pF
515
pF
130
pF
50
ns
173
ns
203
ns
220
ns
199
nC
18
nC
100
nC
0.18 C/W
0.21
C/W
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
VDS = 500V, ID = 0.5A, TC = 75C, tp = 5s
Characteristic Values
Min. Typ. Max.
250
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
VSD
IF = 16A, VGS = -10V, Note 1
trr
IRM
QRM
IF = 8A, -di/dt = 100A/s
VR = 100V, VGS = -10V
Characteristic Values
Min. Typ. Max.
0.8
1.3 V
695
ns
20
A
7
μC
IXTH16N50D2
IXTT16N50D2
TO-247 Outline
P
123
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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