2SC3941 データシートの表示（PDF） - Panasonic Corporation
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2SC3941 Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3941
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SA1858
/ ■ Features
e . • High collector-emitter voltage (Base open) VCEO
ge • High transition frequency fT
c sta • Allowing supply with the radial taping
n dycle ■ Absolute Maximum Ratings Ta = 25°C
a e lifec Parameter
Symbol Rating
Unit
ct Collector-base voltage (Emitter open) VCBO
300
V
n u du Collector-emitter voltage (Base open) VCEO
300
V
ro Emitter-base voltage (Collector open) VEBO
7
V
te tin r P Collectorcurrent
IC
70
mA
fou e n. Peak collector current
ICP
100
mA
ing typ tio Collector power dissipation
PC
1
W
in n llow nce e ed rma Junction temperature
Tj
150
°C
s fo na typ typ info n/ Storage temperature
Tstg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..12
(1.27)
(1.27)
0.45+–00..115
123
1: Emitter
2: Collector
2.54±0.15
3: Base
TO-92NL-A1 Package
a oincludemaintenancetinued type latest .co.jp/e ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed ned inte on ed ut nic Parameter
Symbol
Conditions
Min Typ Max Unit
M is tinu pla ma disc tinu bo so Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
300
V
n L a na Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
V
iscon laned isco UR .pa Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
2
µA
d g on Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
30
220
e/D p win mic Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
1.2
V
Danc follo .se Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
80
MHz
n it w Collector output capacitance
te is w (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
4
8
pF
ain e v ://w Storage time
tstg
IC = 100 mA, IB1 = 10 mA, IB2 = 0
2.5
µs
M as ttp Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Ple h 2. *: Rank classification
Rank
P
Q
R
hFE
30 to 100
60 to 150 100 to 220
Publication date: February 2003
SJC00151BED
1
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