FDMC4435BZ(2008) データシートの表示（PDF） - Fairchild Semiconductor

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FDMC4435BZ
(Rev.:2008)

P-Channel Power Trench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

∆TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = -250µA, VGS = 0V

ID = -250µA, referenced to 25°C

VDS = -24V,

VGS = 0V,

TJ = 125°C

VGS = ±25V, VDS = 0V

-30

V

22

mV/°C

-1

µA

-100

±10

µA

On Characteristics

VGS(th)

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage

Temperature Coefficient

rDS(on)

Static Drain to Source On Resistance

gFS

Forward Transconductance

VGS = VDS, ID = -250µA

-1.0

ID = -250µA, referenced to 25°C

VGS = -10V, ID = -8.5A

VGS = -4.5V, ID = -6.3A

VGS = -10V, ID = -8.5A,

VDD = -5V, ID = -8.5A

TJ = 125°C

-1.9

-5.3

14.6

23.1

20.7

24

-3.0

V

mV/°C

20.0

37.0 mΩ

28.0

S

Dynamic Characteristics

Ciss

Coss

Crss

Rg

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

VDS = -15V, VGS = 0V,

f = 1MHz

f = 1MHz

1540 2045 pF

295 395

pF

260 385

pF

5.1

Ω

Switching Characteristics

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

VDD = -15V, ID = -8.5A,

VGS = -10V, RGEN = 6Ω

VGS = 0V to -10V

VGS = 0V to -4.5V

VDD = -15V,

ID = -8.5A

10

20

ns

6

12

ns

34

55

ns

20

36

ns

33

46

nC

17

24

nC

5

nC

9

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.5A

VGS = 0V, IS = -1.9A

(Note 2)

(Note 2)

0.92

1.5

V

0.75

1.2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IF = -8.5A, di/dt = 100A/µs

22

ns

11

nC

NOTES:

1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

.

a. 53°C/W when mounted on

a 1 in2 pad of 2 oz copper

b. 125°C/W when mounted on a

minimum pad of 2 oz copper

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -27V, VGS = -10V.

4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

FDMC4435BZ Rev.C

2

www.fairchildsemi.com

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