FDMC4435BZ(2008) データシートの表示（PDF） - Fairchild Semiconductor
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FDMC4435BZ Datasheet PDF : 7 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -8.5A
8
VDD = -15V
6
VDD = -10V
4
VDD = -20V
2
0
0
10
20
30
40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
40
10
TJ = 25oC
TJ = 125oC
1
0.001 0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
100
10
1
0.1
0.01
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
100us
1ms
10ms
100ms
1s
10s
DC
100
Figure 11. Forward Bias Safe
Operating Area
30
20
VGS = -10V
VGS = -4.5V
10
Limited by Package
RθJC = 4oC/W
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10-4
VDS = 0V
10-5
10-6
TJ = 125oC
10-7
TJ = 25oC
10-8
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 12. Igss vs Vgss
FDMC4435BZ Rev.C
4
www.fairchildsemi.com
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