FDMC4435BZ データシートの表示（PDF） - Fairchild Semiconductor
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FDMC4435BZ Datasheet PDF : 7 Pages
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FDMC4435BZ
September 2010
P-Channel Power Trench® MOSFET
-30 V, -18 A, 20 m:
Features
General Description
Max rDS(on) = 20 m: at VGS = -10 V, ID = -8.5 A
Max rDS(on) = 37 m: at VGS = -4.5 V, ID = -6.3 A
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL Tested
Termination is Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top
Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-30
±25
-18
-32
-8.5
-50
24
31
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4
(Note 1a)
53
°C/W
Device Marking
FDMC4435BZ
Device
FDMC4435BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMC4435BZ Rev.D2
www.fairchildsemi.com
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