STAC2932BW(2014) データシートの表示（PDF） - STMicroelectronics

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STAC2932BW
(Rev.:2014)

HF/VHF/UHF RF power N-channel MOSFETs

STMicroelectronics 

STAC2932B

1

Electrical data

Electrical data

1.1

1.2

Maximum ratings

(TCASE = 25 °C)

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

(1)

V(BR)DSS Drain source voltage

125

VDGR

Drain-gate voltage (RGS = 1 MΩ)

125

VGS

Gate-source voltage

±20

ID

PDISS

TJ

TSTG

Drain current

Power dissipation

Max. operating junction temperature

Storage temperature

40

625

200

-65 to +150

1. TJ = 150 °C

Thermal data

Symbol

RthJC

Table 3. Thermal data

Parameter

Junction - case thermal resistance

Value

0.28

Unit

V

V

V

A

W

°C

°C

Unit

°C/W

DocID15497 Rev 6

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