STAC2932BW データシートの表示（PDF） - STMicroelectronics

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STAC2932BW

HF/VHF/UHF RF power N-channel MOSFETs

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STAC2932B

2.1

TCASE = +25 °C

Static

Table 4. Static (per side)

Symbol

Test conditions

V(BR)DSS

IDSS

IGSS

VGS(Q)

VDS(ON)

GFS

CISS

COSS

CRSS

VGS = 0 V

VGS = 0 V

VGS = 20 V

VDS = 10 V

VGS = 10 V

VDS = 10 V

VGS = 0 V

IDS = 100 mA

VDS = 50 V

VDS = 0 V

ID = 250 mA

ID = 10 A

ID = 5 A

VDS = 50 V

f = 1 MHz

Min. Typ. Max. Unit

125

V

50 μA

250 nA

1.5 2.5 4.0 V

3.0 V

5

S

468

pF

206

pF

16

pF

2.2

Dynamic

Table 5.

Symbol

Dynamic

Test conditions

POUT

hD

VDD = 50 V, IDQ = 2 x 250 mA, PIN = 4 W, f = 175 MHz

VDD = 50 V, IDQ = 2 x 250 mA, PIN = 4 W, f = 175 MHz

Min. Typ. Max. Unit

300 390

W

55 68

%

4/14

Doc ID 15497 Rev 5

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