NTB5605P(2004) データシートの表示（PDF） - ON Semiconductor
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NTB5605P Datasheet PDF : 8 Pages
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NTB5605P
2400
2200
2000
VDS = 0 V
Ciss
VGS = 0 V
1800
1600
1400
1200 Crss
1000
800
600
400
200
Crss
0
10
5 −VGS 0 −VDS 5
10
TJ = 25°C
Ciss
Coss
15
20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
100
tr
tf
td(off)
8
60
7 VDS
6
5
4
QGS
3
QT
QDS
45
VGS
30
2
15
1
ID = −17 A
TJ = 25°C
0
0
0
4
8
12
16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
VGS = 0 V
TJ = 25°C
15
10
10
td(on)
VDD = −30 V
ID = −17 A
VGS = −5.0 V
1
1
10
100
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
5
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = −20 V
SINGLE PULSE
TC = 25°C
10
dc
1
0.1
0.1
10 ms
1 ms
100 µs
RDS(on) Limit
Thermal Limit
Package Limit
10 µs
1
10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
400
ID = −15 A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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