DMG2305UX-13 データシートの表示（PDF） - Diodes Incorporated.

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DMG2305UX-13

P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Continuous Drain Current (Note 5) VGS = -4.5V

Pulsed Drain Current (Note 6)

Steady

State

t<10s

TA = +25°C

TA = +70°C

TA = +25°C

TA = +70°C

Symbol

VDSS

VGSS

ID

ID

IDM

DMG2305UX

Value

Unit

-20

V

±8

V

-4.2

-3.3

A

-5.0

-4.0

A

-10

A

Thermal Characteristics

Characteristic

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

Steady State

t<10s

Symbol

PD

RθJA

RθJC

TJ, TSTG

Value

1.4

90

64

33

-55 to +150

Unit

W

°C/W

°C/W

°C/W

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Symbol Min

BVDSS

-20

TJ = +25°C

IDSS



IGSS



VGS(TH)

-0.5

Static Drain-Source On-Resistance

RDS(ON)



Forward Transfer Admittance

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

|YFS|



CISS



COSS



CRSS



Rg



Qg



Qgs



Qgd



tD(ON)



tR



tD(OFF)



tF



Typ

Max







-1.0



±100

—

-0.9

40

52

52

100

68

200

9



808



85



77



15.2



10.2



1.3



2.2



10.8



13.7



79.3



34.7



Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Unit

Test Condition

V VGS = 0V, ID = -250µA

µA VDS = -20V, VGS = 0V

nA VGS = ±8V, VDS = 0V

V

VDS = VGS, ID = -250µA

VGS = -4.5V, ID = -4.2A

mΩ VGS = -2.5V, ID = -3.4A

VGS = -1.8V, ID = -2A

s

VDS = -5V, ID = -4A

pF

pF

VDS = -15V, VGS = 0V

f = 1.0MHz

pF

Ω VGS = 0V, VDS = 0V, f = 1.0MHz

nC

nC VGS = -4.5V, VDS = -4V,

nC ID = -3.5A

ns

ns VDS = -4V, VGS = -4.5V,

ns Rg = 6Ω, ID = -1A

ns

DMG2305UX

Document number: DS36196 Rev. 6 - 2

2 of 6

www.diodes.com

November 2016

© Diodes Incorporated

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