PDTB113EU データシートの表示（PDF） - NXP Semiconductors.

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PDTB113EU

500 mA, 50 V PNP resistor-equipped transistors

NXP Semiconductors. 

Nexperia

PDTB1xxxU series

500 mA, 50 V PNP resistor-equipped transistors

-0.5

IC

(A)

-0.4

-0.3

-0.2

aaa-012067

-3.7

-3.4

-3.1

-2.8

-2.5

-2.2

-1.9

-1.6

-0.1

-1.3

IB = -1 mA

0

0

-1

-2

-3

-4

-5

VCE (V)

40

Cc

(pF)

30

aaa-012068

20

10

0

0

-10

-20

-30

-40

-50

VCB (V)

Fig 8.

Tamb = 25 C

PDTB113EU: Collector current as a function of

collector-emitter voltage; typical values

Fig 9.

f = 1 MHz; Tamb = 25 C

PDTB113EU: Collector capacitance as a

function of collector-base voltage; typical

values

103

fT

(MHz)

102

aaa-012064

10

1

-10-1

-1

-10

-102

-103

IC (mA)

VCE = 5 V; Tamb = 25 C

Fig 10. PDTB113EU: Transition frequency as a function of collector current; typical values of built-in transistor

PDTB1XXXU_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 6 May 2014

© Nexperia B.V. 2017. All rights reserved

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