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IRG4BC10SD-S データシートの表示(PDF) - International Rectifier
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IRG4BC10SD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
IRG4BC10SD-S Datasheet PDF : 13 Pages
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50
I
F
= 8.0A
45
I
F
= 4.0A
40
35
30
25
V
R
= 2 00 V
T
J
= 125
°
C
T
J
= 25
°
C
20
100
1000
di
f
/dt - (A/µs)
Fig. 14
- Typical Reverse Recovery vs. di
f
/dt
200
V
R
= 2 00 V
T
J
= 125
°
C
T
J
= 25
°
C
160
I
F
= 8.0A
120
I
F
= 4.0A
IRG4BC10SD-S/L
14
V
R
= 20 0V
T
J
= 125
°
C
12
T
J
= 25
°
C
I
F
= 8.0A
10
I
F
= 4.0A
8
6
4
2
0
100
1000
di
f
/dt - (A/µs)
Fig. 15
- Typical Recovery Current vs. di
f
/dt
1000
V
R
= 20 0V
T
J
= 125
°
C
T
J
= 25
°
C
I
F
= 8.0A
I
F
= 4.0A
80
40
0
100
1000
di
f
/dt - (A/µs)
Fig. 16
- Typical Stored Charge vs. di
f
/dt
www.irf.com
100
100
di
f
/dt - (A/µs)
Fig. 17
- Typical di
(rec)M
/dt vs. di
f
/dt,
A
1000
7
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