SI4102DY データシートの表示（PDF） - Vishay Semiconductors
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SI4102DY Datasheet PDF : 10 Pages
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Si4102DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS 10 V, ID = 2.7 A
VGS 6 V, ID = 2.5 A
Forward Transconductancea
Dynamicb
gfs
VDS = 10 V, ID = 2.7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 2.7 A
Gate-Source Charge
Gate-Drain Charge
Qgs
VDS = 50 V, VGS = 6 V, ID = 2.7 A
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 23.8
ID 2.1 A, VGEN = 6 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 23.8
ID 2.1 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS = 2.1 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
100
2
8
Typ. Max. Unit
110
- 7.5
0.130
0.145
7
V
mV/°C
4
V
± 100
nA
1
µA
10
A
0.158
0.175
S
370
40
pF
20
7.1
11
4.6
7
nC
1.7
2
3
10
15
10
15
10
15
10
15
ns
10
15
10
15
12
20
10
15
4
A
8
0.8
1.2
V
50
80
ns
75
120
nC
28
ns
22
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 69252
2
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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